Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry

被引：0
|
作者：
Jellison Jr., G.E. [1 ]
Merkulov, V.I. [1 ]
Puretzky, A.A. [1 ]
Geohegan, D.B. [1 ]
Eres, G. [1 ]
Lowndes, D.H. [1 ]
Caughman, J.B. [2 ]
机构：
[1] Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056, United States
[2] Fusion Energy Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056, United States
来源：
Thin Solid Films | 2000年 / 377-378卷
关键词：
This research was sponsored by the US Department of Energy under contract No. DE-AC05-00OR22725 with the Oak Ridge National Laboratory; managed by UT-Battelle; LLC;
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学科分类号：
摘要：
21
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页码：68 / 73
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