Memory effect in standard spin valve structures

被引：0
|
作者：
机构：
来源：
| 1600年 / Am Inst Phys, Woodbury, NY, USA卷 / 87期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Memory effect in standard spin valve structures
    Li, YF
    Yu, RH
    Xiao, JQ
    Dimitrov, DV
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4951 - 4953
  • [2] Reduction of AMR effect in giant magnetoresistance spin valve structures
    Li, M
    Liao, SH
    Horng, C
    Zheng, Y
    Tong, RY
    Ju, K
    Dieny, B
    IEEE TRANSACTIONS ON MAGNETICS, 2001, 37 (04) : 1733 - 1735
  • [3] THE EFFECT OF HYDROGENATION ON THE MAGNETIC PROPERTIES OF LAYERED SPIN VALVE STRUCTURES
    Kuncser, V.
    Tolea, F.
    Schinteie, G.
    Jepu, I.
    Palade, P.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2011, 6 (01) : 199 - 206
  • [4] The magnetoresistive effect induced by stress in spin-valve structures
    Qian Li-Jie
    Xu Xiao-Yong
    Hu Jing-Guo
    CHINESE PHYSICS B, 2009, 18 (06) : 2589 - 2595
  • [5] The magnetoresistive effect induced by stress in spin-valve structures
    钱丽洁
    许小勇
    胡经国
    Chinese Physics B, 2009, 18 (06) : 2589 - 2595
  • [6] Absolute spin-valve effect with superconducting proximity structures
    Huertas-Hernando, D
    Nazarov, YV
    Belzig, W
    PHYSICAL REVIEW LETTERS, 2002, 88 (04) : 4 - 470034
  • [7] Effect of thin oxide layers incorporated in spin valve structures
    Gillies, MF
    Kuiper, AET
    Leibbrandt, GWR
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) : 6922 - 6924
  • [8] Parametric spin-valve effect in superconductor/ferromagnet structures
    Kushnir, V. N.
    Kupriyanov, M. Yu.
    LOW TEMPERATURE PHYSICS, 2016, 42 (10) : 900 - 904
  • [9] Crossover between standard and inverse spin-valve effect in atomically thin superconductor/half-metal structures
    Devizorova, Zh
    Mironov, S.
    PHYSICAL REVIEW B, 2019, 100 (06)
  • [10] A spin-valve memory cell
    Wang, ZG
    Nakamura, Y
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1996, 159 (1-2) : 233 - 235
12345