Design of 3 to 5 GHz CMOS low noise amplifier for ultra-wideband (UWB) system

被引：1
|
作者：
Wong, S.-K. [1 ]
Kung, F. [1 ]
Maisurah, S. [2 ]
Osman, M.N.B. [2 ]
Hui, S.J. [3 ]
机构：
[1] Faculty of Engineering, Multimedia University, Jalan Multimedia, Cyberjaya,63000, Malaysia
[2] Telekom Research and Development, Malaysia
[3] Intel Technology Sdn. Bhd, Malaysia
来源：
Progress In Electromagnetics Research C | 2009年 / 9卷
关键词：
Cascode amplifiers - CMOS integrated circuits - Broadband networks - Low noise amplifiers - Ultra-wideband (UWB) - Broadband amplifiers - Integrated circuit design;
D O I：
10.2528/PIERC09062202
中图分类号：
学科分类号：
摘要：
A single-stage ultra-wideband (UWB) CMOS low noise amplifier (LNA) employing interstage matching inductor on conventional cascode inductive source degeneration structure is presented in this paper. The proposed LNA is implemented in 0.18 µm CMOS technology for a 3 to 5 GHz ultra-wideband system. By careful optimization, an interstage inductor can increase the overall broadband gain while maintaining a low level of noise figure of an amplifier. The fabricated prototype has a measured power gain of +12.7 dB, input return loss of 18 dB, output return loss of 3 dB, reverse isolation of 35 dB, noise figure of 4.5 dB and input IP3 of −1 dBm at 4 GHz, while consuming 17 mW of DC dissipation at a 1.8 V supply voltage. © 2018, Electromagnetics Academy. All rights reserved.
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页码：25 / 34
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