Process design for preventing the gate oxide thinning in the integration of dual gate oxide transistor

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作者：
Kim, Seong-Ho [1 ]
Kim, Sung-Hoan [1 ]
Kim, Sung-Eun [1 ]
Kim, Myung-Soo [1 ]
Park, Joo-Han [1 ]
Kim, Eun-Soo [1 ]
Kim, Jin-Tae [1 ]
机构：
[1] Kim, Seong-Ho
[2] Kim, Sung-Hoan
[3] Kim, Sung-Eun
[4] Kim, Myung-Soo
[5] Park, Joo-Han
[6] Kim, Eun-Soo
[7] Kim, Jin-Tae
来源：
Kim, S.-H. | 1600年 / Japan Society of Applied Physics卷 / 41期
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