Defect engineering in III-V ternary alloys: Effects of strain and local charge on the formation of native deep defects

被引：0

作者：

Amore Bonapasta, A. ^{[1
]}

Giannozzi, P. ^{[2
]}

机构：

[1] CNR Istituto di Chimica dei Materiali (ICMAT), Via Salaria Km 29.5, CP 10, 00016 Monterotondo Stazione, Italy

[2] INFM Scuola Normale Superiore, Piazza Dei Cavalieri 7, I-56126 Pisa, Italy

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 2002年 / 186卷 / 1-4期

关键词：

D O I：

10.1016/S0168-583X(01)00906-5

中图分类号：

学科分类号：

摘要：

引用

页码：229 / 233

共 16 条

[1] Defect engineering in III-V ternary alloys: Effects of strain and local charge on the formation of native deep defects
Bonapasta, AA
Giannozzi, P
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 : 229 - 233
[2] Defect engineering in III-V ternary alloys: effects of strain and local charge on the formation of substitutional and interstitial native defects
Bonapasta, AA
Giannozzi, P
PHYSICA B-CONDENSED MATTER, 2001, 308 : 846 - 849
[3] Effects of strain and local charge on the formation of deep defects in III-V ternary alloys
Bonapasta, AA
Giannozzi, P
PHYSICAL REVIEW LETTERS, 2000, 84 (17) : 3923 - 3926
[4] Defect engineering in III-V ternary alloys: effects of strain and local charge on the formation of vacancies and antisites.
Bonapasta, AA
Giannozzi, P
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1455 - 1456
[5] Electron scattering by native defects in III-V nitrides and their alloys
Hsu, L
Walukiewicz, W
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 513 - 518
[6] A PSEUDOPOTENTIAL APPROACH TO THE DISORDER EFFECTS IN III-V TERNARY SEMICONDUCTOR ALLOYS
ITO, T
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1986, 135 (02): : 493 - 502
[7] CHEMICAL TRENDS IN THE FORMATION AND BINDING-ENERGY OF NATIVE DEFECTS IN III-V SEMICONDUCTORS
GU, YM
FRITSCHE, L
CHRISTENSEN, NE
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 159 (02): : 617 - 627
[8] An Approach to Optimize the Thermoelectric Properties of III-V Ternary InGaSb Crystals by Defect Engineering via Point Defects and Microscale Compositional Segregations
Kumar, Velu Nirmal
Hayakawa, Yasuhiro
Udono, Haruhiko
Inatomi, Yuko
INORGANIC CHEMISTRY, 2019, 58 (17) : 11579 - 11588
[9] Biaxial strain modulated valence-band engineering in III-V digital alloys
Ahmed, Sheikh Z.
Tan, Yaohua
Zheng, Jiyuan
Campbell, Joe C.
Ghosh, Avik W.
PHYSICAL REVIEW B, 2022, 106 (03)
[10] Scanning tunneling microscopy images of III-V semiconductor alloys: Strain effects
McKay, HA
Chen, HJ
Feenstra, RM
Poole, PJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (01): : 18 - 22

← 1 2 →