Temperature Effect on Photovoltaic Efficiency of Mono-crystalline Silicon Cell

被引：0

作者：

Zhai H. ^{[1
]}

Xie H. ^{[2
]}

Wu Z. ^{[2
]}

Mao J. ^{[2
]}

Liu A. ^{[2
]}

Li J. ^{[2
]}

Li Y. ^{[2
]}

机构：

[1] School of Energy and Power Engineering, Nanjing University of Science and Technology, Nanjing

[2] College of Environmental and Materials Engineering, Shanghai Polytechnic University, Shanghai

来源：

Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2018年 / 46卷 / 05期

关键词：

Mono-crystalline silicon cell; Open circuit voltage; Photovoltaic efficiency; Short circuit current; Temperature effect;

D O I：

10.14062/j.issn.0454-5648.2018.05.04

中图分类号：

学科分类号：

摘要：

The I-Vcharacteristic curve, open circuit voltage (Voc), short circuit current (Isc) and maximum output power (Pmax) of a mono-crystalline silicon cell were measured in vaccumat 83.15-353.15 K. The photovoltaic efficiency (η) and fill factor (fF) at different temperatures were calculated. The results show that the Isc is increased by 0.0083 mA/K and the increased rate is 5.83% at 83.15-353.15 K. The Voc is decreased by 1.8 mV/K and the decreased rate is 20.74%. Moreover the fF and Pmax decrease when the cell temperature increases. The fF is decreased by 0.36×10-3/K and the decreased rate is 9.75%. The Pmax is decreased by 0.021%/K and the decreased rate is 5.71%. As the band gap of silicon decreases with increasing the temperature, the more photons are absorbed and the recombinations are enhanced. © 2018, Editorial Department of Journal of the Chinese Ceramic Society. All right reserved.

引用

页码：638 / 642

页数：4

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