Comparison of performance, switching energy and process variations for the TFET and MOSFET in logic

被引：0
|
作者：
Avci, Uygar E. [1 ]
Rios, Rafael [1 ]
Kuhn, Kelin [1 ]
Young, Ian A. [1 ]
机构：
[1] Components Research, Technology and Manufacturing Group, Intel Corporation, RA3-252, 2501 NW 229th Ave, Hillsboro, OR 97124, United States
来源：
Digest of Technical Papers - Symposium on VLSI Technology | 2011年
关键词：
Engineering Village;
D O I：
5984671
中图分类号：
学科分类号：
摘要：
Comparison of performance - Device characteristics - Device parameters - Low-power logic - Process Variation - Supply voltages - Switching energy - Tunneling field-effect transistors
引用
收藏
页码：124 / 125
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