Enhanced light output in InGaN-based light-emitting diodes with omnidirectional one-dimensional photonic crystals

被引：0
|
作者：
Lin, Chung-Hsiang [1 ,2 ]
Tsai, Jui-Yen [2 ]
Kao, Chih-Chiang [1 ]
Kuo, Hao-Chung [1 ]
Yu, C.-C. [2 ]
LoJun-Ren, J.-R. [2 ]
Leung, Kok-Ming [3 ]
机构：
[1] Department of Photonics, Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
[2] HighLink Technology Corporation, ChuNan 350, Taiwan
[3] Department of Computer and Information Science, Polytechnic University, Six Metrotech Center, Brooklyn, NY 11201, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 3 A期
关键词：
We have successfully designed and fabricated GaN-based light-emitting diodes (LEDs) containing an omnidirectional one-dimensional photonic crystal (1D PC). The ID PC is composed of alternatively stacked TiO2 and SiO2 layers designed to possess a photonic band gap (PBG) within the blue regime of interest. With the same multiple quantum well (MQW) emission peak at approximately 450 nm and a driving current of 20 mA; the light output powers of the LED with and without the 1D PC are approximately 11.7 and 6.5 mW; respectively. The enhancement in light extraction of our LED with ID PC demonstrates that a properly designed omnidirectional ID PC can have a higher reflectance and a wider reflection angle than a conventional distributed Bragg reflector (DBR). Our work shows promising potential for the enhancement of output powers of commercial light emitting devices. © 2006 The Japan Society of Applied Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：1591 / 1593
相关论文
共 50 条
  • [1] Enhanced light output in InGaN-based light-emitting diodes with onmidirectional one-dimensional photonic crystals
    Lin, CH
    Tsai, JY
    Kao, CC
    Kuo, HC
    Yu, CC
    Lo, JR
    Leung, KM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A): : 1591 - 1593
  • [2] Enhancement in light output of InGaN-based microhole array light-emitting diodes
    Hsueh, TH
    Shen, JK
    Huang, HW
    Chu, JY
    Kao, CC
    Kuo, HC
    Wang, SC
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (06) : 1163 - 1165
  • [3] Light output improvement of InGaN-based light-emitting diodes by microchannel structure
    Chang, Liann-Be
    Chang, Yuan-Hsiao
    Jeng, Ming-Jer
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (13-16) : 1175 - 1177
  • [4] InGaN-based blue light-emitting diodes and laser diodes
    R and D Department, Nichia Chem. Indust., Ltd., 491 O., Tokushima, Japan
    J Cryst Growth, (290-295):
  • [5] InGaN-based blue light-emitting diodes and laser diodes
    Nakamura, S
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 290 - 295
  • [6] Confocal microphotoluminescence of InGaN-based light-emitting diodes
    Okamoto, K
    Kaneta, A
    Kawakami, Y
    Fujita, S
    Choi, J
    Terazima, M
    Mukai, T
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (06)
  • [7] Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes
    Choi, HW
    Jeon, CW
    Dawson, MD
    Edwards, PR
    Martin, RW
    Tripathy, S
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 5978 - 5982
  • [8] Present status of InGaN-based light-emitting diodes and laser diodes
    Nagahama, S
    Iwasa, N
    Senoh, M
    Matsushita, T
    Sugimoto, Y
    Kiyoku, H
    Kozaki, T
    Sano, M
    Matsumura, H
    Umemoto, H
    Chocho, K
    Mukai, T
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 899 - 902
  • [9] InGaN-Based Light-Emitting Diodes With Nanoporous Microhole Structures
    Lin, Chia-Feng
    Chen, Kuei-Ting
    Lin, Chun-Min
    Yang, Chung-Chieh
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (10) : 1057 - 1059
  • [10] Fluorescence microscopy investigation of InGaN-based light-emitting diodes
    Presa, Silvino
    Maaskant, Pleun P.
    Kappers, Menno J.
    Corbett, Brian
    IET OPTOELECTRONICS, 2016, 10 (02) : 39 - 43
12345