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- [1] Enhanced hole generation in Mg-doped AlGaN/GaN superlattices due to piezoelectric field JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B): : 2428 - 2430
- [4] Optical anisotropy induced by pyramidal defects in Mg-doped AlGaN/GaN superlattices Journal of Applied Physics, 2006, 100 (06):
- [7] Efficient hole generation above 1019 cm-3 in Mg-doped InGaN/GaN superlattices at room temperature JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (3AB): : L195 - L196
- [8] Improved electrical property of InGaN/GaN light-emitting diodes by using a Mg-doped AlGaN/GaN superlattices PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 856 - 859
- [10] Structural defects in Mg-doped GaN and AlGaN grown by MOCVD GAN AND RELATED ALLOYS-2002, 2003, 743 : 839 - 844