In this work, results of research of CdxHg1-xTe surface of oriented (310) epitaxial heterostructures after polish etching is considered. The research by atomic force microscopy of CdxHg1-xTe surface have been indicate that etching of bromic solution with methanol reduces roughness on surface three times the size as compared with etching of bromic solution not methanol. The investigation by atomic force microscopy of CdxHg1-xTe oriented (310) epitaxial heterostructures have been indicate that etching the surface of bromic solution with methanol reduces roughness of the surface and leakage surface currents.