Ce concentration dependence on the magnetic and transport properties of Ce doped Si epitaxial films prepared by molecular beam epitaxy

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作者：
Yokota, T. [1 ]
Fujimura, N. [1 ]
Wada, T. [1 ]
Hamasaki, S. [1 ]
Ito, T. [1 ]
机构：
[1] Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka599-8531, Japan
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| 1600年 / American Institute of Physics Inc.卷 / 91期
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