Monte Carlo theoretical study of defect generation at heterovalent ZnSe/GaAs epitaxial interfaces

被引：0
|
作者：
Nakayama, Takashi [1 ]
机构：
[1] Department of Physics, Faculty of Science, Chiba University, Yayoi 1-33, Inage, Chiba 263-8522, Japan
来源：
Defect and Diffusion Forum | 2002年 / 210-212卷
关键词：
D O I：
10.4028/www.scientific.net/ddf.210-212.103
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学科分类号：
摘要：
15
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页码：103 / 111
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