AlGaN/GaN high-electron-mobility transistor employing an additional gate for high-voltage switching applications

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[1] Min-Woo, H.A.
[2] Lee, Seung-Chul
[3] Her, Jin-Cherl
[4] Seo, Kwang-Seok
[5] Han, Min-Koo
来源：
Min-Woo, H.A. (isobar@emlab.snu.ac.kr) | 1600年 / Japan Society of Applied Physics卷 / 44期
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Electron mobility;
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