Theoretical analysis and computer simulation of secondary recrystallization in grain-oriented silicon steel

The mechanism of secondary recrystallization in grain-oriented silicon steel has been studied on the basis of the statistical model of grain growth in which the inhibitor and texture are taken into account. The theoretical analysis reveals that this model explains the evolution of Goss-oriented grain to a coarse grain more than thousand times larger in diameter than the matrix grains by consuming a hundred million other grains. The computer simulation shows that this model successfully depicts the important features of secondary recrystallization; grain growth behavior of secondary grains, secondary grain size and sharpness of Goss texture.