Fabrication of 6.5kV High-voltage Full SiC Power MOSFET Modules

被引：0

作者：

Jin X. ^{[1
]}

Li S. ^{[1
]}

Tian L. ^{[2
]}

Chen Y. ^{[1
]}

Hao F. ^{[3
]}

Bai S. ^{[1
]}

Pan Y. ^{[2
]}

机构：

[1] State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices (Nanjing Electronic Device Institute), Nanjing, 210016, Jiangsu Province

[2] State Key Laboratory of Advanced Power Transmission Technology (Global Energy Interconnection Researcher Institute), Changping District, Beijing

[3] Guo Yang Electronics. Co., Ltd., Yangzhou, 225100, Jiangsu Province

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 06期

基金：

国家重点研发计划;

关键词：

6.5kV; Silicon carbide; Silicon carbide (SiC) power metal oxide field-effect transistor (MOSFET) modules; Switching loss; Switching times;

D O I：

10.13334/j.0258-8013.pcsee.190695

中图分类号：

学科分类号：

摘要：

Fabrication and characterization of 6.5kV, 25A and 100A full silicon carbide (SiC) power metal oxide field-effect transistor (MOSFET) modules was reported. These SiC MOSFETs and SiC Schottky barrier diodes used in 6.5kV full SiC Power MOSFET Modules were fabricated by Nanjing Electronic Devices Institute. Great development and progress at SiC exitaxy, devices fabrication and module packaging localization work are fully shown by this report. We compared the dynamic and static characteristics of 6.5kV, 25A and 100A Modules. At room temperature, the current handling capability of these two 6.5kV SiC modules were up to 25A and 100A, respectively. With gate electrode shorted, at a drain bias of 6.5kV, these two modules show a leakage current of 2.0μA and 8.77μA. This show dynamic parameters and switching waveforms of 6.5kV 25A modules were tested, to configure the dynamic characteristics of single MOSFET. the power module shows fast switching characteristics with turn-on (turn-on loss) and turn-off (turn-off loss) times of 140ns (61mJ) and 84ns (6.6mJ), respectively, at 3.6kV supply voltage and 25A current. Compared to traditional 6.5kV Si IGBT, this result shows huge advantages on switching speed and switching losses. This advanced module performance demonstrates the ability of using 6.5kV SiC MOSFET power modules in energy transmission and distribution networks. © 2020 Chin. Soc. for Elec. Eng.

引用

页码：1753 / 1758

页数：5

共 14 条

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