Effects of Al doping concentration on ZnO energy absorption materials

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作者：
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China [1 ]
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Faguang Xuebao | / 6卷 / 722-726期
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15;
D O I：
10.3788/fgxb20143506.0722
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