Effect of carrier (hole) temperature on performance of optical amplifiers quantum dot structure

被引：1
|
作者：
Ghazai A.J. [1 ]
Flayyih A.H. [2 ,3 ]
Attab R.R. [4 ]
Al-Khursan A.H. [3 ]
机构：
[1] Physics Department, Science College, Al-Nahrain University, Baghdad
[2] Applied Geology Department, Science College, University of Thi-Qar, Nassiriya
[3] Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, University of Thi-Qar, Nassiriya
[4] Physics Department, College for Pure Education, University of Kerbala, Kerbala
来源：
Journal of Optical Communications | 2023年 / 44卷 / 04期
关键词：
carrier heating; carriers temperature; electron-hole interaction; QD SOAs;
D O I：
10.1515/joc-2021-0252
中图分类号：
学科分类号：
摘要：
Carriers temperature in quantum dot (QD) optical amplifiers has been modelled theoretically taken into account hole contribution, which is not considered early. The contributions of wetting layer (WL), first excited state (ES1), and second excited state (ES2) have also been considered. Effect of WL-ES2 recombination time of both electrons and holes, carrier heating (CH) time of electrons and holes, in addition to electron hole recombination time are examined. The results show that there is a gap between electron and hole heating temperature due to the difference between there recovery times. It is found that fast hole (long electron) recombination time yield a high carrier temperature. © 2022 Walter de Gruyter GmbH, Berlin/Boston.
引用
收藏
页码：411 / 416
页数：5
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