Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications

被引:0
|
作者
机构
[1] Hao, Aize
[2] Ismail, Muhammad
[3] He, Shuai
[4] Qin, Ni
[5] Huang, Wenhua
[6] Wu, Jiang
[7] Bao, Dinghua
来源
Bao, Dinghua (stsbdh@mail.sysu.edu.cn) | 1600年 / Elsevier Ltd卷 / 732期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Improved unipolar resistive switching characteristics of Au-doped nickel ferrite magnetic thin films for nonvolatile memory applications
    Hao, Aize
    Ismail, Muhammad
    He, Shuai
    Qin, Ni
    Huang, Wenhua
    Wu, Jiang
    Bao, Dinghua
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 732 : 573 - 584
  • [2] Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
    Chang, Wen-Yuan
    Lai, Yen-Chao
    Wu, Tai-Bor
    Wang, Sea-Fue
    Chen, Frederick
    Tsai, Ming-Jinn
    APPLIED PHYSICS LETTERS, 2008, 92 (02)
  • [3] Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
    Guo, D. Y.
    Wu, Z. P.
    An, Y. H.
    Li, P. G.
    Wang, P. C.
    Chu, X. L.
    Guo, X. C.
    Zhi, Y. S.
    Lei, M.
    Li, L. H.
    Tang, W. H.
    APPLIED PHYSICS LETTERS, 2015, 106 (04)
  • [4] The resistive switching characteristics in TaON films for nonvolatile memory applications
    Chen, Min-Chen
    Chang, Ting-Chang
    Chiu, Yi-Chieh
    Chen, Shih-Cheng
    Huang, Sheng-Yao
    Chang, Kuan-Chang
    Tsai, Tsung-Ming
    Yang, Kai-Hsiang
    Sze, Simon M.
    Tsai, Ming-Jinn
    THIN SOLID FILMS, 2013, 528 : 224 - 228
  • [5] Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications
    Choi, DH
    Lee, D
    Sim, H
    Chang, M
    Hwang, HS
    APPLIED PHYSICS LETTERS, 2006, 88 (08)
  • [6] Unipolar resistive switching behavior of amorphous YCrO3 films for nonvolatile memory applications
    Sharma, Yogesh
    Misra, Pankaj
    Katiyar, Ram S.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)
  • [7] Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications
    Hu, L.
    Lin, G. T.
    Luo, X.
    Wei, R. H.
    Zhu, X. B.
    Song, W. H.
    Dai, J. M.
    Sun, Y. P.
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (21)
  • [8] Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications
    Wu, You-Shen
    Tsai, Meng-Hung
    Huang, Cheng-Liang
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2022, 277
  • [9] Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
    Huang, Sheng-Yao
    Chang, Ting-Chang
    Chen, Min-Chen
    Chen, Shih-Ching
    Lo, Hung-Ping
    Huang, Hui-Chun
    Gan, Der-Shin
    Sze, Simon M.
    Tsai, Ming-Jinn
    SOLID-STATE ELECTRONICS, 2011, 63 (01) : 189 - 191
  • [10] Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications
    Tang, M. H.
    Zeng, Z. Q.
    Li, J. C.
    Wang, Z. P.
    Xu, X. L.
    Wang, G. Y.
    Zhang, L. B.
    Yang, S. B.
    Xiao, Y. G.
    Jiang, B.
    SOLID-STATE ELECTRONICS, 2011, 63 (01) : 100 - 104