Improved Sintering Behavior and Microwave Dielectric Properties for Ge4+ Doped BaSnSi3O9 Ceramics

被引：0
|
作者：
Du K. [1 ,2 ]
Yin C. [1 ,2 ]
Yang J. [1 ,2 ]
Zhang M. [1 ,2 ]
Lyu W. [1 ,2 ]
Lei W. [1 ,2 ]
机构：
[1] Wenzhou Advanced Manufacturing Institute, Huazhong University of Science and Technology, Zhejiang, Wenzhou
[2] School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan
来源：
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2023年 / 51卷 / 04期
关键词：
ceramics; crystal structural parameter; microwave dielectric properties; sintering behavior;
D O I：
10.14062/j.issn.0454-5648.20220461
中图分类号：
学科分类号：
摘要：
Microwave dielectric ceramics are key materials for manufacturing 5G communication components. The microwave dielectric ceramics of BaSn(Si1–xGex)3O9(0≤x≤1.0) were prepared via conventional solid-state reactions, and the effect of substituting Ge4+ for Si4+ of BaSnSi3O9 ceramic on the sintering behavior, crystal structure, and microwave dielectric properties was investigated. The results show that the BaSnSi3O9 ceramic exhibits the porous microstructure and poor microwave dielectric properties (i.e., εr=6.61, Q×f=7 977 GHz at 15.03 GHz, and τf=‒37.8×10–6/℃). The BaSn (Si1–xGex)3O9(0≤x≤1.0) solid solutions are obtained with Ge4+ substitution for Si4+, the crystal structure is a hexagonal structure with P-6c2 space group. The Ge4+ substitution for Si4+ can improve the microwave dielectric properties of BaSn(Si1–xGex)3O9(0≤x≤1.0) ceramics by optimising the sintering behavior and changing the crystal structural parameters. The Q×f values of BaSn(Si1–xGex)3O9(0≤x≤1.0) ceramics are mainly controlled by the relative covalency of Si/Ge—O and Sn—O bonds. As x=1.0, the BaSn(Si1–xGex)3O9 ceramic exhibits the optimal microwave dielectric properties (i.e., εr=8.53, Q×f=15 829 GHz at 14.41 GHz, and τf= ‒34.2×10–6 ℃–1). © 2023 Chinese Ceramic Society. All rights reserved.
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页码：866 / 871
页数：5
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