High power 110 GHz balanced Schottky diode frequency doubler

被引：0
|
作者：
Tian Y. [1 ,2 ]
He Y. [1 ,2 ]
Huang K. [1 ,2 ]
Jiang J. [1 ,2 ]
Miao L. [1 ,2 ]
机构：
[1] Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu
[2] Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang
来源：
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | 2019年 / 48卷 / 09期
关键词：
110; GHz; Balanced doubler; High power; Schottky diode;
D O I：
10.3788/IRLA201948.0919002
中图分类号：
学科分类号：
摘要：
Generation of power at higher terahertz frequencies typically requires several stages of multiplication, which put forward the demand for high power devices at earlier stages. For higher power capacity and efficiency, the doubler circuit was realized based on ceramic substrates with high thermal conductivity. Moreover, with the accurate Schottky diode equal model, a high power 110 GHz balanced doubler was analyzed and designed in HFSS and ADS using symmetry boundary condition. With an input power of 28 dBm, the measured results showed that the maximum output power and efficiency of the doubler range from 102 to 114.2 GHz are 108 mW and 17.6% respectively, providing sufficient power for the chain. © 2019, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
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  • [1] Erickson N.R., High efficiency submillimeter frequency multipliers, 1990 IEEE MTT-S International Microwave Symposium Digest, pp. 1301-1304, (1990)
  • [2] Porterfield D.W., Crowe T.W., Bradley R.F., Et al., An 80/160 GHz broadband, fixed-tuned, balanced frequency doubler, 1998 IEEE MTT-S International Microwave Symposium Digest, pp. 391-394, (1998)
  • [3] Porterfield D.W., Crowe T.W., Bradley R.F., Et al., A high-power fixed-tuned millimeter-wave balanced frequency doubler, IEEE Trans Microw Theory Techn, 47, 4, pp. 419-425, (1999)
  • [4] Charlottesville, VA, USA, High power multipliers (D Series)
  • [5] Chattopadhyay G., Schlecht E., Ward J.S., Et al., An all-solid-state broad-band frequency multiplier chain at 1500 GHz, IEEE Trans Microw Theory Techn, 52, 5, pp. 1538-1547, (2004)
  • [6] Miao L., Huang W., Jiang J., Et al., Research on a 0.17 THz Schottky varactors doubler, Infrared and Laser Engineering, 44, 3, pp. 947-950, (2015)
  • [7] He Y., Jiang J., Lu B., Et al., High efficiency 170 GHz balanced Schottky diode frequency doubler, Infrared and Laser Engineering, 46, 1, (2017)
  • [8] Liu H., Jeff P., Colin V., Et al., A 40 to 160 GHz high power multiplier chain using planar Schottky diodes, 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, (2015)
  • [9] Yao C., Zhou M., Luo Y., A high power 320-356 GHz frequency multipliers with schottky diodes, Chinese Journal of Electronics, 25, 5, pp. 986-990, (2016)
  • [10] Montero-De-Paz J., Sobornytskyy M., Hoefle M., Et al., High power 150 GHz Schottky based varactor doubler, 9th Global Symposium on Millimeter Waves (GSMM) & 7th ESA Workshop on Millimetre-Wave Technology and Applications, (2016)
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