Analysis of dominant non-radiative recombination mechanisms in InGaN green LEDs grown on silicon substrates

被引：0
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作者：
Lv, Quanjiang [1 ]
Gao, Jiangdong [1 ]
Tao, Xixia [1 ]
Zhang, Jianli [1 ]
Mo, Chunlan [1 ]
Wang, Xiaolan [1 ]
Zheng, Changda [1 ]
Liu, Junlin [1 ]
机构：
[1] National Institute of LED on Si Substrate, Nanchang University, Nanchang,330096, China
来源：
Journal of Luminescence | 2020年 / 222卷
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