Van der Waals Epitaxy of Ⅲ-Ⅴ Compounds and Their Applications

被引：0
|
作者：
Chen Q. [1 ,2 ,3 ]
Yin Y. [1 ,2 ,3 ]
Ren F. [1 ,2 ,3 ]
Liang M. [1 ,2 ,3 ]
Wei T.-B. [1 ,2 ,3 ]
Yi X.-Y. [1 ,2 ,3 ]
Liu Z.-Q. [1 ,2 ,3 ]
机构：
[1] Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
[2] University of Chinese Academy of Sciences, Beijing
[3] Beijing Engineering Research Center for The 3rd Generation Semiconductor Materials and Application, Beijing
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2020年 / 41卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Graphene; Van der Waals epitaxy; Ⅲ-Ⅴ; compound;
D O I：
10.37188/fgxb20204108.0899
中图分类号：
学科分类号：
摘要：
Ⅲ-Ⅴ compound semiconductors have wide band gap and high carrier mobility, making them suitable candidates for light-emitting diodes(LEDs), laser diodes(LDs), high electron mobility transistors(HEMTs) and other optoelectronics. For covalent epitaxy of Ⅲ-Ⅴ compounds on hetero-substrates, high quality epilayer can only be obtained when the lattice mismatch between the substrate and epilayer is negligible. However, van der Waals epitaxy(vdWE) has been proven to be a useful route to relax the requirements of lattice mismatch and thermal mismatch between the epilayer and the substrate. By using vdWE, the stress in epilayer can be sufficiently relaxed, and the epilayer can be easily exfoliated and transferred, which is useful for the Ⅲ-Ⅴ compound-based novel devices fabricating. In this paper, we reviewed and discussed the important progresses on the researches of nitrides vdWE. The potential applications of nitrides vdWE are also prospected. © 2020, Science Press. All right reserved.
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页码：899 / 912
页数：13
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