The Research on Thermal Characteristics of RF Power Amplifier Based on ANSYS

被引：0
|
作者：
Li J. [1 ]
Yin X.-L. [1 ]
Dai F.-L. [1 ]
Zhu J.-Y. [1 ]
Liu C.-X. [1 ]
Ying X.-Y. [2 ]
Liu T.-J. [1 ]
机构：
[1] Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo
[2] Zhejiang Business Technology Institute, Ningbo
来源：
Li, Jun (fgstones@163.com) | 1600年 / Chinese Institute of Electronics卷 / 48期
关键词：
RF power amplifier; Temperature; Thermal analysis; Thermal deformation; Thermal stress;
D O I：
10.3969/j.issn.0372-2112.2020.12.026
中图分类号：
学科分类号：
摘要：
At first, a design and simulation of a RF power amplifier is presented. Then, the thermal characteristics analysis model of the RF power amplifier is built and the thermal characteristics of the RF power amplifier is analyzed by using the finite element method. After that the effects of increasing the through hole and different copper coating thickness, environmental temperature and dissipative power on the temperature, thermal stress and thermal deformation of the RF power amplifier are studied. Based on the above analysis, the RF power amplifier is fabricated and measured at last. In the frequency range of 3.3GHz to 3.6GHz, power added efficiency is from 62.6% to 69% with output power greater than 39.2dBm and gain larger than 12dB. When the ambient temperature is 21℃, the maximum temperature of the RF power amplifier reaches 90.0℃, and the test results are close to the simulation analysis results. The research of this paper provides important guidance for the design and manufacture of RF power amplifier in the future. © 2020, Chinese Institute of Electronics. All right reserved.
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页码：2487 / 2492
页数：5
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