Influence of Parameter Dispersion of Parallel Press-pack IGBT Chips on Its Current Sharing During Turn-off Process

被引：0
|
作者：
Cao Z. [1 ]
Cui X. [1 ]
Dai A. [2 ]
Li X. [1 ]
Fan J. [1 ]
Zhan Y. [1 ]
Tang X. [2 ]
机构：
[1] State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Changping District, Beijing
[2] State Key Laboratory of Advanced Power Transmission Technology, Beijing Institute of Smart Energy, Changping District, Beijing
来源：
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2024年 / 44卷 / 05期
关键词：
chip parameter; current sharing; during turn-off process; press pack insulated gate bipolar transistor (IGBT); screening recommendations;
D O I：
10.13334/j.0258-8013.pcsee.223136
中图分类号：
学科分类号：
摘要：
Serious current imbalance will occur during turn-off process of parallel press pack insulated gate bipolar transistor (IGBT), which directly affects the reliability of the device. This paper focuses on the influence of the chip parameter of press pack IGBT on the current sharing during its turn-off process. First, according to the turn-off mechanism and waveform of the single chip, the influence law of the chip parameter on the collector current variation in each stage is analyzed. Next, the first class of current competition and the second class of current competition in the turn-off waveform of dual chips are defined. Additionally, the random distribution model for the first class of current competition is established, and the influence law of chip parameter and the number of parallel connections on current sharing during turn-off process is obtained. Then, the validity of the proposed rule is verified by the double-pulse experiment on dual chips. Finally, based on the analysis results, some screening recommendations such as the mutual compensation of threshold voltage, saturation voltage drop, and keeping the threshold voltage difference and transconductance difference different signs are put forward. The research results of this paper can provide guidance for parameter screening of parallel press pack IGBT chips. © 2024 Chinese Society for Electrical Engineering. All rights reserved.
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页码：1913 / 1923
页数：10
相关论文
共 19 条
  • [1] CAOZikai, CUIXiang, LIXuebao, Et al., Influence of parameter dispersion of parallel press-pack IGBT chips on its current sharing during turn-on process, Proceedings oftheCSEE, 43, 20, pp. 8025-8038, (2023)
  • [2] FAN Jiayu, WANG Yaohua, HE Feng, Et al., Comparisons of two turn-off failures under clamped inductive load in Planar FS 3.3kV/50 a IGBT chip, IEEE Transactions on Power Electronics, 37, 12, pp. 14471-14481, (2022)
  • [3] AZAR R, UDREA F, NG W T, Et al., The current sharing optimization of paralleled IGBTs in a power module tile using a PSpice frequency dependent impedance model, IEEE Transactions on Power Electronics, 23, 1, pp. 206-217, (2008)
  • [4] PALMER P R, JOYCE J C., Current redistribution in multi-chip IGBT modules under various gate drive conditions, 1998 Seventh International Conference on Power Electronics and Variable Speed Drives (IEE Conf. Publ.No. 456), pp. 246-251, (1998)
  • [5] PENG Cheng, LI Xuebao, FAN Jiayu, Et al., Experimental investigations on current sharing characteristics of parallel chips inside press-pack IGBT devices, IEEE Transactions on Power Electronics, 37, 9, pp. 10672-10680, (2022)
  • [6] WUYuhan, GAO Guangang, LIUYixin, A voltage differential and pulse synchronous driving control of paralleled IGBTs for current balance improving, 2021 IEEE 16th Conference on Industrial Electronics and Applications (ICIEA), pp. 837-842, (2021)
  • [7] BOHMER J, SCHUMANN J, FLEISCH K, Et al., Current mismatch during switching due to the self-turn-off effect in paralleled IGBT, 2013 15th European Conference on Power Electronics and Applications (EPE), pp. 1-9, (2013)
  • [8] CHEN Nan, CHIMENTO F, NAWAZ M, Et al., Dynamic characterization of parallel-connected high-power IGBT modules, IEEE Transactions on Industry Applications, 51, 1, pp. 539-546, (2015)
  • [9] XUE Peng, FU Guicui, ZHANG Dong, Modeling inductive switching characteristics of high-speed buffer layer IGBT, IEEE Transactions on Power Electronics, 32, 4, pp. 3075-3087, (2017)
  • [10] TANG Yunyu, MA Hao, Dynamic electrothermal model of paralleled IGBT modules with unbalanced stray parameters, IEEE Transactions on Power Electronics, 32, 2, pp. 1385-1399, (2017)
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