Solution epitaxy of single-crystal and single-domain KNbO3 film with a great photovoltaic current

被引:0
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作者
Yang, Q. [1 ]
Zhang, Z. [3 ]
Liao, S. [4 ]
Zhu, R. [5 ]
Fu, G. [1 ]
Lin, C. [1 ]
Chen, J. [1 ]
Tian, H. [3 ]
Han, G. [1 ]
Ren, Z. [1 ,2 ,6 ]
机构
[1] State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou,310027, China
[2] Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan,030024, China
[3] Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou,310027, China
[4] Department of Physics, Beijing Normal University, Beijing,100875, China
[5] Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing,100871, China
[6] Research Center for Intelligent Sensing, Zhejiang Lab, Hangzhou,311100, China
基金
中国国家自然科学基金;
关键词
Ferroelectric films - Ferroelectricity - Niobium compounds - Nonlinear optics - Optoelectronic devices - Perovskite - Potassium - Refractive index - Substrates - Temperature;
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学科分类号
摘要
As a classic ferroelectric material, orthorhombic perovskite KNbO3 demonstrates a large electro-optical coefficient, high refractive index, and excellent nonlinear optical property. These make single-crystal KNbO3 films being long-pursued for lead-free sensor or optoelectronic device applications. However, it remains a challenge to obtain high-quality single-crystal KNbO3 films because of the volatility of potassium at a high growth temperature. In this work, single-crystal KNbO3 films with a tunable thickness have been successfully fabricated by a low-temperature (∼220 °C) hydrothermal epitaxy on cubic single-crystal Nb:SrTiO3 substrates. Interestingly, the KNbO3 film was investigated to adopt a single-domain structure with a polarization direction pointing to the substrate. In-depth characterization reveals an intriguing disordered region of approximately 0.6–1.2 nm because of partial Nb substitution of Ti near the interface, giving rise to the coexistence of Ti3+ and Ti4+ ions. Such region is proposed to release a large interface strain energy from a large lattice misfit (∼2.3%) between {011}KNbO3 and {100}Nb:SrTiO3 and reduce interfacial electrostatic energy via screening of the positive polar surface of KNbO3. This allows to drive a hydrothermal epitaxy of single-crystal and single-domain KNbO3 without forming a typical dislocation. The films demonstrate a great photovoltaic short-circuit current of 15.65 μA/cm2 under the 375 nm laser irradiation of 500 mW/cm2 light intensity, and the corresponding photoresponsivity is the highest among the emerged KNbO3-based materials. Such improvement in the photoresponsivity has been attributed to a successful low-temperature solution epitaxy of single-crystal and single-domain KNbO3 films, where K deficiency can be significantly suppressed. These findings suggest that a solution epitaxy strategy is effective in producing high-quality ferroelectric films for lead-free optoelectronic or self-powered photodetector device applications. © 2022 Elsevier Ltd
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