Preparation of β-Ga2O3 Films by Two-step Thermal Oxidation

被引：0

作者：

Li Z.-M. ^{[1
]}

Yu Y. ^{[1
]}

Jiao T. ^{[1
]}

Hu D.-Q. ^{[1
]}

Dong X. ^{[1
]}

Li W.-C. ^{[1
]}

Zhang Y.-T. ^{[1
]}

Lyu Y.-J. ^{[2
]}

Feng Z.-H. ^{[2
]}

Zhang B.-L. ^{[1
]}

机构：

[1] State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun

[2] National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute, Shijiazhuang

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2019年 / 40卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Gallium oxide; High temperature oxidation; Wide bandgap simiconductors;

D O I：

10.3788/fgxb20194010.1247

中图分类号：

学科分类号：

摘要：

To obtain β-Ga2O3 films with high quality, we optimized conventional GaN high temperature oxidation. The β-Ga2O3 thin films were prepared from GaN thin films by one-step and two-step high temperature oxidation, respectively. The prepared samples were characterized by X-ray diffraction (XRD), filed emission scanning electron microscopy (FESEM) and Raman spectroscopy. The results showed that the GaN films could not be completely oxidized at 950℃, and the sample obtained directly at 1 150℃ had no obvious crystal orientation. In contrast, the GaN films were completely oxidized by two-step oxidation method, and the obtained β-Ga2O3 films had obvious crystal orientation along the direction of <201>. The surfaces of the samples obtained by two-step oxidation showed nanowire structures. The optimized oxidation time was oxidation at 950℃ for 3 h followed by oxidation at 1 150℃ for 1 h, the obtained sample had most obvious nanowire structures, and the diameters of the nanowires were about 30-40 nm. Raman spectroscopy confirmed that the sample obtained under this condition had high crystalline quality. By analyzing the structure and morphology properties of different samples, we found that different oxidation modes at different temperatures were the main causes of these results. © 2019, Science Press. All right reserved.

引用

页码：1247 / 1253

页数：6

共 34 条

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