Resonant Tunneling of Holes Through δ-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells; [δ-掺杂Be受主GaAs/AlAs多量子阱的空穴共振隧穿]

Three samples of GaAs/AlAs multiple quantum wells with different quantum-well widths are grown on semi-insulating (100) p-type GaAs substrates by the molecular beam epitaxy with Be acceptors δ-doped at the center of GaAs well layers. Three corresponding two-terminal devices are fabricated by photolithographic and semiconductor manufacturing technologies based on these samples. The device current-voltage characteristics are measured at temperatures in a range of 4-200 K. The resonant tunneling of heavy- and light-holes through Be δ-doped GaAs/AlAs multiple quantum wells are clearly observed. It is found that the position of resonant tunneling for light-heavy holes shifts to higher voltage with decreasing quantum-well sizes, which is in good agreement with the results calculated by the AlAs/GaAs/AlAs double-barrier theoretical model. However, as the measured temperatures increase, two peaks of resonant tunneling of light-holes move toward lower voltage, while one of the resonant peaks behaves as an oscillating mode at 150 K. © 2019, Science Press. All right reserved.