Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

被引：0
|
作者：
Liu Y. [1 ]
Li T. [2 ]
Zhu X. [1 ]
Yang H. [2 ]
Li X. [2 ]
机构：
[1] Xinsheng Technology Co., Ltd., Beijing
[2] Department of Electronic Engineering, BNRist, Tsinghua University, Beijing
来源：
Dianzi Yu Xinxi Xuebao/Journal of Electronics and Information Technology | 2023年 / 45卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Compute-in-Memory (CiM); Ferroelectric device; Ferroelectric Field Effect Transistors (FeFETs); Memory; Nonvolatile Memory (NVM);
D O I：
10.11999/JEIT230370
中图分类号：
学科分类号：
摘要：
Recently, with the development of the Internet of Things and Artificial Intelligence, higher energy efficiency, density, and performance in on-chip memories and intelligent computing are required. Facing the energy efficiency and density bottleneck in conventional CMOS memories and the “memory wall” problem in the Von Neumann architecture, emerging Nonvolatile Memories (NVMs) such as Ferroelectric Field Effect Transistors (FeFETs) bring new opportunities to solve the challenges. FeFETs have the characteristics of non-volatility, ultra-low power, and high on-off ratio, which are very suitable for memories and Compute-in-Memory (CiM) in high-density, low-power scenarios and would support the implementation of data-intensive applications at the edge. This paper first reviews the development, structure, characteristics, and modeling of FeFETs. Then, the exploration and optimization of FeFET-based memories with different circuit structures and characteristics are discussed. Further, this paper summarizes the FeFET-based CiM circuits, including nonvolatile computing, logic-in-memory, matrix-vector multiplication, and content-addressable memories. Finally, the prospects and challenges of FeFET-based memory and CiM are analyzed. © 2023 Science Press. All rights reserved.
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页码：3083 / 3097
页数：14
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