Research on conducted emi characteristics of sic mosfet considering temperature effect

被引：0
|
作者：
Du M. [1 ,2 ]
Bian W. [1 ]
Wang H. [2 ]
Dai Q. [1 ]
Ouyang Z. [1 ]
机构：
[1] Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin
[2] State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin
来源：
Progress In Electromagnetics Research C | 2021年 / 112卷
关键词：
Temperature distribution;
D O I：
10.2528/PIERC21030303
中图分类号：
学科分类号：
摘要：
—The junction temperature change of SiC MOSFET will change its switching process, and then affect the electromagnetic interference (EMI) characteristics of the system where the device is located and the safe operation of the surrounding equipment. Therefore, it is of great significance to research the temperature dependence of its EMI characteristics. In this paper, a buck converter composed of SiC MOSFET is taken as the research object to study the temperature variation characteristics of the conducted EMI spectrum during the switching process. Combined with the specific circuit connection form of the buck converter, the coupling paths of the conducted EMI are determined, and then the influence mechanisms of temperature change on the differential mode (DM) interference and common mode (CM) interference are analyzed. The theoretical analysis and experimental results show that the DM interference of the buck converter composed of SiC MOSFET increases with the increase of temperature, and the CM interference is almost unaffected by temperature. When the working temperature increases from 25◦C to 145◦C, the peak value of DM voltage increases by 6.7 dBµV, and the peak value of CM voltage changes less than 1.4 dBµV. © 2021, Electromagnetics Academy. All rights reserved.
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页码：69 / 82
页数：13
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