Suppression of Voltage Spike in Resonant Switched Capacitor Converter Considering Parasitic Inductance

被引：0
|
作者：
Liu Y. [1 ]
Yang X. [1 ]
Yan C. [1 ]
Chen Q. [2 ]
Wen P. [1 ,3 ]
Seiki I. [4 ]
机构：
[1] School of Electrical Engineering, Beijing Jiaotong University, Beijing
[2] Electric Power Research Institute State Grid, Zhejiang Electric Power Co. Ltd, Hangzhou
[3] Key Laboratory of Optical Engineering, Chinese Academy of Sciences, Chengdu
[4] Fuji Electric Co. Ltd, Tokyo
来源：
Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2021年 / 36卷 / 12期
关键词：
Laminated busbar; Parasitic inductance; Resonant switched capacitor converter; Voltage spike suppression;
D O I：
10.19595/j.cnki.1000-6753.tces.L90231
中图分类号：
学科分类号：
摘要：
The resonant switched capacitor converter (RSCC) based on silicon carbide (SiC) devices is suitable for high operation efficiency and power density due to its soft switching characteristics. However, the high operation frequency makes it sensitive to the parasitic inductance, which may cause the voltage spike of switching devices. By analyzing the RSCC laminated busbar model, the equivalent circuit with parasitic inductance was built. The influence of parasitic inductance on the operating mode of the circuit was studied, and the relationship between the parasitic inductance and the voltage spike of the switching devices was derived. Accordingly, this paper proposed two voltage spike suppression methods for optimizing the laminated busbar model and the snubber capacitance. Simulation and experimental results verified the effectiveness and feasibility of the voltage spike suppression methods in this paper. © 2021, Electrical Technology Press Co. Ltd. All right reserved.
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页码：2627 / 2639
页数：12
相关论文
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