Acoustic Emission-based Detection and Analysis of Mechanical Stress Wave in Cascode GaN HEMT Device

被引：0

作者：

He Y. ^{[1
]}

Liu S. ^{[1
]}

Bai Y. ^{[2
]}

Liu F. ^{[1
]}

Geng X. ^{[1
]}

Ren D. ^{[1
]}

Tang R. ^{[1
]}

机构：

[1] College of Electrical and Information Engineering, Hunan University, Hunan Province, Changsha

[2] Key Laboratory of Control of Power Transmission and Conversion, Shanghai JiaoTong University, Ministry of Education, Minhang District, Shanghai

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2023年 / 43卷 / 02期

基金：

中国国家自然科学基金;

关键词：

gallium nitride (GaN) high electron mobility;

D O I：

10.13334/j.0258-8013.pcsee.212292

中图分类号：

学科分类号：

摘要：

In recent years, the third-generation power semiconductor devices represented by gallium nitride (GaN) materials have begun to be widely used in high-pressure, high-temperature, and high-frequency working conditions. Timely and efficient non-destructive testing of devices can reduce or avoid losses caused by device damage in these conditions. Based on the acoustic emission detection technology, this paper detects and analyzes the mechanical stress wave of the Cascode GaN high electron mobility transistor (HEMT), which is widely used at present. Multiple sets of repetitive experiments are carried out on the cooling surface and the package surface of the device, and the acoustic emission probe is used to acquire its acoustic signals while working, and analyzes the signals after filtering. At last, the characteristics and changing laws of the device’s turn-on and turn-off stress wave parameters are summarized. The purpose is to explore the influence of device mechanical stress wave by drain-source voltage and gate-source voltage, and lay the foundation for the power cycling aging test to establish the connection between the device’s health status and its mechanical stress wave. ©2023 Chin.Soc.for Elec.Eng.

引用

页码：750 / 760

页数：10

共 23 条

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