Silicon-Based Charge Trapping Memory Devices for Next-Generation Flexible Electronics Application

被引：3
|
作者：
Das, Uttam Kumar [1 ]
Aslam, Nabeel [2 ]
Hussain, Muhammad Mustafa [3 ]
El-Atab, Nazek [1 ]
机构：
[1] King Abdullah University of Science and Technology (KAUST), Program of ECE, Computer Electrical Mathematical Science and Engineering Division, Thuwal,23955, Saudi Arabia
[2] KAUST Core Labs, Thuwal,23955, Saudi Arabia
[3] Purdue University, Elmore Family School of ECE, West Lafayette,IN,47907, United States
来源：
IEEE Journal on Flexible Electronics | 2023年 / 2卷 / 05期
关键词：
Alumina - Capacitance - Charge trapping - CMOS integrated circuits - Flexible displays - MOS devices - Nonvolatile storage - Oxide semiconductors - Plasma CVD - Plasma enhanced chemical vapor deposition - Silica - Silicon oxides - Wearable technology;
D O I：
10.1109/JFLEX.2023.3329080
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：408 / 413
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