An Indirect Series-Connected SiC MOSFET Power Module with Voltage Self-Balance

被引：0

作者：

Liu J. ^{[1
]}

Zheng Z. ^{[1
]}

Li C. ^{[1
]}

Wang K. ^{[1
]}

Li Y. ^{[1
]}

机构：

[1] State Key Lab of Control and Simulation of Power System and Generation Equipments, Tsinghua University, Beijing

来源：

Diangong Jishu Xuebao/Transactions of China Electrotechnical Society | 2023年 / 38卷 / 07期

关键词：

indirect series-connection; medium-voltage power module; SiC MOSFET; voltage self-balance;

D O I：

10.19595/j.cnki.1000-6753.tces.211763

中图分类号：

学科分类号：

摘要：

Nowadays, the blocking voltage of common commercial wide band gap silicon carbide metal oxide field effect transistors (SiC MOSFETs) is less than 1.7kV. In order to improve its equivalent withstanding voltage, an indirect series-connected method based on diode-capacitor hybrid clamping topology is proposed in this paper. And a quasi two-level open-loop modulation method is designed to realize the automatic voltage self-balance. With this indirect series-connected method, a 3.6kV/20A power module was fabricated using SiC MOSFET bare dies. Moreover, a gate driver circuit with overcurrent protection was designed. Along with the gate driver, the whole power module was equivalent to a general-purpose medium-voltage two-level power module with small size and high integration. Finally, the experimental results verified the universality of the power module and also showed its advantages in switching loss and economy. © 2023 Chinese Machine Press. All rights reserved.

引用

页码：1900 / 1909

页数：9

共 21 条

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