Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications

被引：0
|
作者：
Tan, Zhiyong [1 ,2 ]
Cao, Juncheng [1 ,2 ]
机构：
[1] Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai,200050, China
[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing,100049, China
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2019年 / 46卷 / 06期
关键词：
Terahertz waves - Quantum cascade lasers - Semiconductor quantum wells - Photoelectricity;
D O I：
10.3788/CJL201946.0614004
中图分类号：
学科分类号：
摘要：
Photoelectric characterization technique is an important foundation of the terahertz technology. It covers photoelectric device characterization, spectral measurement, beam improvement, and communication and imaging applications in terahertz region, and plays an important role in terahertz application field. Firstly, the working principle and the latest progress of two kinds of terahertz semiconductor quantum devices are presented. Then, their applications in terahertz photoelectric characterization such as pulse light power measurement and detector responsivity calibration, and their applications in terahertz fast modulation and detection as well as terahertz scanning imaging systems are summarized. Finally, the improvements of the above characterization techniques are also introduced and discussed, including the methods to improve the terahertz light beam quality and the effective detection area of detectors. The potential applications of devices and characterization techniques in the future are also presented. © 2019, Chinese Lasers Press. All right reserved.
引用
收藏
相关论文
共 50 条
  • [1] Photoelectric Characterization Technique Based on Terahertz Semiconductor Quantum-Well Devices and Its Applications
    Tan Zhiyong
    Cao Juncheng
    [J]. CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2019, 46 (06):
  • [2] Terahertz Semiconductor Quantum Well Devices
    Wchter M
    Wasilewski Z R
    Buchanan M
    Aers G C
    Spring Thorpe A J
    Williams B S
    [J]. Journal of Semiconductors, 2006, (04) : 627 - 634
  • [3] Terahertz Semiconductor Quantum Devices and Their Applications
    Cao, J. C.
    Chen, Z.
    Zhou, T.
    Tan, Z. Y.
    Zhang, R.
    Han, Y. J.
    Li, H.
    Guo, X. G.
    Feng, W.
    Wang, C.
    Liu, H. C.
    [J]. 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2012,
  • [4] Terahertz frequency conversion in bulk and quantum-well semiconductor lasers
    Bava, GP
    Osella, G
    Debernardi, P
    [J]. FIBER AND INTEGRATED OPTICS, 1996, 15 (03) : 225 - 242
  • [5] Terahertz quantum-well photodetector
    Liu, HC
    Song, CY
    SpringThorpe, AJ
    Cao, JC
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (20) : 4068 - 4070
  • [6] Terahertz quantum-well photodetectors
    Liu, HC
    Song, CY
    SpringThorpe, AJ
    Cao, JC
    [J]. INFRARED PHYSICS & TECHNOLOGY, 2005, 47 (1-2) : 169 - 174
  • [7] Semiclassical description of electron transport in semiconductor quantum-well devices
    Baraff, GA
    [J]. PHYSICAL REVIEW B, 1997, 55 (16): : 10745 - 10753
  • [8] Spectroscopic method of strain analysis in semiconductor quantum-well devices
    Biermann, ML
    Duran, S
    Peterson, K
    Gerhardt, A
    Tomm, JW
    Bercha, A
    Trzeciakowski, W
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4056 - 4065
  • [9] Semiconductor multiple quantum-well photorefractive devices for vibration measurement
    Shimura, T
    Iwamoto, S
    Taketomi, S
    Arakawa, Y
    Kuroda, K
    [J]. ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING, 2002, 4919 : 40 - 47
  • [10] Slow and fast light in semiconductor quantum-well and quantum-dot devices
    Chang-Hasnain, Connie J.
    Chuang, Shun Lien
    [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 2006, 24 (12) : 4642 - 4654
12345