Influence of AlN spacer and GaN cap layer in GaN heterostructure for RF HEMT applications

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作者：
Kaneriya, R.K. [1 ,2 ]
Karmakar, Chiranjit [1 ]
Rastogi, Gunjan [1 ]
Patel, M.R. [1 ]
Upadhyay, R.B. [1 ]
Kumar, Punam [1 ]
Bhattacharya, A.N. [1 ]
机构：
[1] Microelectronics Group, Space Applications Centre, ISRO, Ahmedabad, India
[2] Department of Physics, Indian Institute of Space Science and Technology, Thiruvananthapuram, India
来源：
Microelectronic Engineering | 2022年 / 255卷
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