Growth Rates of HFCVD Diamond Films on Silicon Carbide Substrates for Heat Dissipation Applications

被引：0
|
作者：
Li W. [1 ]
Qiao Y. [2 ]
Shu D. [1 ,3 ]
Wang X. [2 ]
机构：
[1] School of Mechanical Engineering, Anhui Polytechnic University, Anhui, Wuhu
[2] School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai
[3] Nano and Molecular Systems Research Unit, Faculty of Science, University of Oulu, Oulu
来源：
Shanghai Jiaotong Daxue Xuebao/Journal of Shanghai Jiaotong University | 2023年 / 57卷 / 08期
关键词：
diamond film; growth rate; heat dissipation; hot filament chemical vapor deposition (HFCVD); quality;
D O I：
10.16183/j.cnki.jsjtu.2022.043
中图分类号：
学科分类号：
摘要：
Diamond has an extremely high thermal conductivity, making it to have a great potential as a heat dissipation material. Based on the hot filament chemical vapor deposition (HFCVD) technique, diamond thick films were deposited on silicon carbide substrates by using the multi-step method in this paper. The scanning electron microscopy (SEM) and Raman spectroscopy were adopted for characterizing the samples. The influences of filament power, carbon concentration, and reactive pressure on the growth rate and quality of the diamond films were systematically studied. It is found that the diamond film with the best quality is synthesized by adopting a filament power of 1 600 W, a methane/hydrogen flux ratio of 18/300 ( nucleation stage) and 14/300 ( growth stage ), and a reactive pressure of 4 kPa. The corresponding growth rate is 1. 4 μm/h. © 2023 Shanghai Jiao Tong University. All rights reserved.
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页码：1078 / 1085
页数：7
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