80 Gb/s High Speed PAM4 Modulated 850 nm Vertical-cavity Surface-emitting Laser

被引：0

作者：

Wang Y. ^{[1
]}

Tong C. ^{[1
,2
]}

Luan X. ^{[2
]}

Jiang N. ^{[2
]}

Tong H. ^{[2
]}

Wang L. ^{[1
,2
]}

Tian S. ^{[1
]}

Meng B. ^{[1
]}

机构：

[1] State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun

[2] Jlight Semiconductor Technology Co.， Ltd, Changchun

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2023年 / 44卷 / 10期

关键词：

high-speed; PAM4; modulation; vertical-cavity surface-emitting laser;

D O I：

10.37188/CJL.20230170

中图分类号：

学科分类号：

摘要：

We present the results of a high-speed direct modulation 850 nm oxide confined vertical cavity surface emitting laser（VCSEL），optimize the design of strain InGaAs/AlGaAs quantum wells to achieve high differential gain， and adjust the photon lifetime through surface etching to achieve response flattening. The developed VCSEL with an oxide aperture of about 7 µm has a flat frequency response， a 3 dB modulation bandwidth of 24 GHz， and a relative noise intensity value of -155 dB/Hz. Without any pre-emphasis and equalization technology， the PAM4 modulation data transmission rate can reach 80 Gb/s. © 2023 Chines Academy of Sciences. All rights reserved.

引用

页码：1811 / 1815

页数：4

共 17 条

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