Electric-Field-Induced Strain Distribution Characteristics of Fe Doped KTa1-xNbxO3 Crystal

被引：0
|
作者：
Jin X. [1 ]
Tian H. [1 ,2 ,3 ]
Tan P. [1 ]
Wang X. [1 ]
机构：
[1] School of Physics, Harbin Institute of Technology, Harbin
[2] Key Laboratory of Micro-Nano Optoelectronic Information System, Ministry of Industry and Information Technology, Harbin
[3] Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan
来源：
Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society | 2022年 / 50卷 / 03期
关键词：
Component distribution; Dielectric properties; Domain structure; Electric-field-induced strain; Ferrum doped potassium tantalum niobate crystal;
D O I：
10.14062/j.issn.0454-5648.20210760
中图分类号：
学科分类号：
摘要：
KTa1-xNbxO3 crystal doped with 0.15% (in mole fraction) Fe was prepared by a top-seeded solution growth method. The dielectric properties, electric-field-induced strain distribution, component distribution and domain structure of Fe: KTN crystal were characterized. The results show that digital holography is a promising method to measure the spatial distribution of strain, and the electric-field-induced strain properties of KTN crystal present a uneven distribution. At room temperature, the maximum strain of crystal is 0.05% when the applied electric field is 435 V/mm, while the strain value is near 0.02% 3/4 area of crystal. There is a relationship among strain distribution, component distribution and domain structure of Fe:KTN crystal. The domain structure of crystal in the region with less Nb content is smaller and the electric-field-induced strain is greater when the room temperature is lower than the Curie temperature. © 2022, Editorial Department of Journal of the Chinese Ceramic Society. All right reserved.
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页码：798 / 804
页数：6
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