Evaluation of leakage current and leakage path of gate-insulating layer used in organic thin-film transistors under mechanical loading

被引：0

作者：

Hidaka, Koji ^{[1
]}

Koganemaru, Masaaki ^{[1
]}

Sekine, Tomohito ^{[2
]}

Shishido, Nobuyuki ^{[3
]}

Kamiya, Shoji ^{[4
]}

Minari, Takeo ^{[5
]}

Ikeda, Toru ^{[1
]}

Tokito, Shizuo ^{[2
]}

机构：

[1] Graduate School of Science and Engineering, Kagoshima University, 1-21-40 Korimoto, Kagoshima, Kagoshima-shi,890-0065, Japan

[2] Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yamagata, Yonezawa-shi,992-8510, Japan

[3] Department of Mechanical Engineering, Faculty of Science and Engineering, Kindai University, 3-4-1 Kowakae, Osaka, Higashiosaka-shi,577-8502, Japan

[4] Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Aichi, Nagoya-shi,466-8555, Japan

[5] National Institute for Materials Science, 1-1 Namiki, Ibaraki, Tsukuba-shi,305-0044, Japan

来源：

Journal of Japan Institute of Electronics Packaging | 2021年 / 24卷 / 06期

关键词：

Insulation;

D O I：

10.5104/jiep.JIEP-D-21-00015

中图分类号：

学科分类号：

摘要：

引用

页码：586 / 594

共 50 条

[1] Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors
Matsukawa, Kimihiro
Watanabe, Mitsuru
Hamada, Takashi
Nagase, Takashi
Naito, Hiroyoshi
[J]. INTERNATIONAL JOURNAL OF POLYMER SCIENCE, 2012, 2012
[2] Gate induced leakage and drain current offset in organic thin film transistors
Jia, HP
Pant, GK
Gross, EK
Wallace, RM
Gnade, BE
[J]. ORGANIC ELECTRONICS, 2006, 7 (01) : 16 - 21
[3] Accurate characterization of organic thin film transistors in the presence of gate leakage current
Singh, Vinay K.
Mazhari, Baquer
[J]. AIP ADVANCES, 2011, 1 (04):
[4] A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors
Xu, Guangwei
Wang, Wei
Wang, Long
Zong, Zhiwei
Lu, Congyan
Wang, Lingfei
Banerjee, Writam
Ji, Zhuoyu
Wang, Hong
Li, Ling
Liu, Ming
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (12) : 4219 - 4224
[5] Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors
Jeong, Sunho
Kim, Dongjo
Lee, Sul
Park, Bong-Kyun
Moon, Jooho
[J]. APPLIED PHYSICS LETTERS, 2006, 89 (09)
[6] Dependence of the leakage current on the film quality in polycrystalline silicon thin-film transistors
Dimitriadis, CA
Farmakis, FV
Brini, J
Kamarinos, G
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2648 - 2651
[7] Dependence of the leakage current on the film quality in polycrystalline silicon thin-film transistors
[J]. Dimitriadis, C.A. (odimitri@sldathos.physios.auth.gr), 1600, American Institute of Physics Inc. (88):
[8] THE ANALYSIS OF THE LEAKAGE CURRENT OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS AS A FUNCTION OF ACTIVE LAYER THICKNESS
SEHIL, H
RAHMANI, NM
RAOULT, F
[J]. MATERIALS CHEMISTRY AND PHYSICS, 1995, 42 (02) : 101 - 105
[9] LEAKAGE CURRENT OF UNDOPED LPCVD POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
DIMITRIADIS, CA
COXON, PA
ECONOMOU, NA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) : 950 - 956
[10] Mechanism of off-leakage current in InGaZnO thin-film transistors
Wakimura, Go
Yamauchi, Yoshimitsu
Matuoka, Toshimasa
Kamakura, Yoshinari
[J]. 2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,

← 1 2 3 4 5 →