An Active Gate Driver for Improving Switching Performance of SiC MOSFET

被引：0

作者：

Li X. ^{[1
]}

Lu Y. ^{[1
]}

Ni X. ^{[1
]}

Wang S. ^{[1
]}

Zhang Y. ^{[1
]}

Tang X. ^{[1
]}

机构：

[1] Nanjing Institute of Technology, Nanjing

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2020年 / 40卷 / 18期

关键词：

Active gate driver; Oscillation; Overshoot; Silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET);

D O I：

10.13334/j.0258-8013.pcsee.200639

中图分类号：

学科分类号：

摘要：

Compared with silicon metal oxide semiconductor field effect transistor, silicon carbide metal oxide semiconductor field effect transistor has higher breakdown voltage, lower on-resistance, faster switching speed and higher operating temperature; therefore, it has been widely used in photovoltaic inverters, electric vehicles and wind power generation. However, the high switching speed of SiC MOSFET will cause current and voltage overshoot and oscillation during switching process. This will not only increases the switching loss of the device, but also may cause damage to the device. This article first analyzed the switching process of the SiC MOSFET in detail, and obtained the generation mechanism of current and voltage overshoot and oscillation during switching process. An active gate driver was designed based on the key factors affecting current and voltage overshoot and oscillation. The designed active gate driver can increase the driving resistance and reduce the gate current in a specific stage during switching process to suppress current and voltage overshoot and oscillation. The experimental results show that, compared with the traditional gate driver, the designed active gate driver can effectively suppress the current and voltage overshoot and oscillation of the device under different driving resistance, different load current and different SiC MOSFET. © 2020 Chin. Soc. for Elec. Eng.

引用

页码：5760 / 5769

页数：9

共 28 条

[1] Sheng Kuang, Ren Na, Xu Hongyi, A recent review on silicon carbide power devices technologies, Proceedings of the CSEE, 40, 6, pp. 1741-1752, (2020)
[2] Li Xuan, Li Xu, Liu Pengkun, Et al., Achieving zero switching loss in silicon carbide MOSFET, IEEE Transactions on Power Electronics, 34, 12, pp. 12193-12199, (2019)
[3] Zheng Shuai, Du Xiong, Zhang Jun, Et al., Measurement of thermal parameters of SiC MOSFET modules with cooling curves, Proceedings of the CSEE, 40, 6, pp. 1759-1768, (2020)
[4] He Ning, Chen Min, Wu Junxiong, Et al., 20-kW zero-voltage-switching SiC-MOSFET grid inverter with 300kHz switching frequency, IEEE Transactions on Power Electronics, 34, 6, pp. 5175-5190, (2019)
[5] Zhang Lei, Yuan Xibo, Wu Xiaojie, Et al., Performance evaluation of high-power SiC MOSFET modules in comparison to Si IGBT Modules, IEEE Transactions on Power Electronics, 34, 2, pp. 1181-1196, (2019)
[6] Marzoughi A, Burgos R, Boroyevich D., Characterization and performance evaluation of the state-of-the-art 3. 3kV 30A full-SiC MOSFETs, IEEE Transactions on Industry Applications, 55, 1, pp. 575-583, (2019)
[7] Zhang Dong, Fan Tao, Wen Xuhui, Et al., Research on high power density SiC motor drive controller, Proceedings of the CSEE, 39, 19, pp. 5624-5634, (2019)
[8] Acharya S, She Xu, Tao Fengfeng, Et al., Active gate driver for SiC-MOSFET-based PV inverter with enhanced operating range, IEEE Transactions on Industry Applications, 55, 2, pp. 1677-1689, (2019)
[9] Zhou Lin, Li Hanjiang, Xie Bao, Et al., Saber modeling of SiC MOSFET and its application and analysis in photovoltaic grid-connected inverter, Transactions of China Electrotechnical Society, 34, 20, pp. 4251-4263, (2019)
[10] Wang Panbao, Zhang Linzhi, Lu Xiaonan, Et al., An improved active crosstalk suppression method for high-speed SiC MOSFETs, IEEE Transactions on Industry Applications, 55, 6, pp. 7736-7744, (2019)

← 1 2 3 →