Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

被引：0

作者：

Yanli ZHAO ^{[1
]}

Junjie TU ^{[1
]}

Jingjing XIANG ^{[1
,2
]}

Ke WEN ^{[1
]}

Jing XU ^{[1
]}

Yang TIAN ^{[1
]}

Qiang LI ^{[1
]}

Yuchong TIAN ^{[1
]}

Runqi WANG ^{[1
]}

Wenyang LI ^{[1
]}

Mingwei GUO ^{[1
]}

Zhifeng LIU ^{[3
]}

Qi TANG ^{[3
]}

机构：

[1] Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology

[2] Sichuan Branch, China Unicom Network Communications Co, Ltd

[3] Wuhan Aroptics-Tech Co,

来源：

Frontiers of Optoelectronics | 2018年 / 11卷 / 04期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode(APD)have been investigated in the temperature range from -50°C to 100°C. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.

引用

页码：400 / 406

页数：7

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