Polarization-enhanced AlGaN solar-blind ultraviolet detectors

Al Ga N solar-blind ultraviolet detectors have great potential in many fields, although their performance has not fully meet the requirements until now. Here, we proposed an approach to utilize the inherent polarization effect of Al Ga N to improve the detector performance. Al Ga N heterostructures were designed to enhance the polarization field in the absorption layer, and a high built-in field and a high electron mobility conduction channel were formed. As a result, a high-performance solar-blind ultraviolet detector with a peak responsivity of 1.42 A/W at 10 V was achieved, being 50 times higher than that of the nonpolarization-enhanced one. Moreover, an electron reservoir structure was proposed to further improve the performance. A higher peak responsivity of 3.1 A/W at30 V was achieved because the electron reservoir structure could modulate the electron concentration in the conduction channel. The investigation presented here provided feasible approaches to improve the performance of the Al Ga N detector by taking advantage of its inherent property.