Analysis of Capacitance-Voltage-Temperature Characteristics of GaN High-Electron-Mobility Transistors

被引：0

作者：

赵妙

刘新宇

机构：

[1] LaboratoryofMicrowaveDeviceandIntegratedCircuits,InstituteofMicroelectronics,ChineseAcademyofSciences

来源：

Chinese Physics Letters | 2015年 / 32卷 / 04期

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

The capacitance-voltage characteristics of AlGaN/GaN high-electron-mobility transistors(HEMTS)are measured in the temperature range of 223-398 K.The dependence of capacitance on frequency at various temperatures is analyzed.At lower temperatures,the capacitance decreases only very slightly with frequency.At higher frequencies the curves for all temperatures tend to one capacitance value.Such behavior can be attributed to the interface states or the dislocations.

引用

页码：152 / 154

页数：3

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