Bulk gallium oxide single crystal growth

被引：0
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作者：
Xutang Tao
机构：
[1] StateKeyLaboratoryofCrystalMaterials&KeyLaboratoryofFunctionalCrystalMaterialsandDevice,ShandongUniversity
来源：
Journal of Semiconductors. | 2019年 / 40卷 / 01期
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摘要：
<正>Gallium oxide, as a new type of ultra-wide bandgap semiconductor, is expected to be used in power electronics and solar blind UV photodetectors. The main cause of research and development onβ-Ga2O3 is inspired by its larger bandgap, higher breakdown field, bigger Baliga figure-of-merit （FOM）, shorter absorption edge and lower cost compared to the third-generation semiconductors, such as SiC and GaN.
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