Vulnerability of L-Band LNA to the Out-of-Band HPM

被引：0

作者：

Zhang, Mingwen ^{[1
]}

Ma, Chunguang ^{[1
]}

Song, Ruilong ^{[1
]}

Luo, Yong ^{[1
,2
]}

机构：

[1] Univ Elect Sci & Technol China UESTC, Sch Elect Sci & Engn, Chengdu 611731, Peoples R China

[2] State Key Lab Electromagnet Space Cognit & Intelli, Beijing 100089, Peoples R China

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 2024年

基金：

中国国家自然科学基金;

关键词：

Radio frequency; PHEMTs; Logic gates; Integrated circuit modeling; Impedance; Electromagnetic interference; Analytical models; High-power microwave (HPM); low-noise amplifier (LNA); out-of-band interference; HIGH-POWER MICROWAVES; SUSCEPTIBILITY; AMPLIFIER; EMI;

D O I：

10.1109/TPS.2024.3439130

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

In this article, the radio frequency (RF) performance degradation induced by out-of-band high-power microwave (HPM) is studied by simulation and experiment. The latent threat of the X-band HPM to the L-band low-noise amplifier (LNA) is verified by experiments. Due to the nonlinearity of active devices, the gain decreases under HPM inference, the nonlinear response of the LNA is investigated from the physical model, and the injection experiment shows that both the duty ratio and peak power of the HPM significantly influence the LNA gain.

引用

页码：2050 / 2058

页数：9

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