Surface Morphology of AlN Layers Grown on a Nano-Structured SiNx/Si(100) Template

被引：0
|
作者：
Bessolov, V. N. [1 ]
Konenkova, E. V. [1 ]
Rodin, S. N. [1 ]
Solomnikova, A. V. [2 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg State Electrotech Univ LETI, St Petersburg 197022, Russia
来源：
SEMICONDUCTORS | 2024年 / 58卷 / 04期
关键词：
aluminum nitride; silicon nitride; nano-structured silicon substrate; SILICON-NITRIDE;
D O I：
10.1134/S1063782624040031
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The morphology of ALN layers grown by Metalorganic Chemical Vapor Deposition on nano-structured NP-Si(001) substrates coated with SiNx has been studied using atomic force microscopy. The AlN layers grown on the SiNx/NP-Si(100) template demonstrate a surface roughness 3.8 times less than those obtained on NP-Si(100), and are close to the roughness value for the AlN layer grown on a flat Si(111) substrate. It has been proposed a model to explain the differences in the formation of the surface morphology of AlN layers on the NP-Si(100) substrate and the SiNx/NP-Si(100) template.
引用
收藏
页码：302 / 305
页数：4
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