Embedded high-quality ternary GaAs1-x Sbx quantum dots in GaAs nanowires by molecular-beam epitaxy

Semiconductor quantum dots are promising candidates for preparing high-performance single photon sources. A basic requirement for this application is realizing the controlled growth of high-quality semiconductor quantum dots. Here, we report the growth of embedded GaAs1-x Sb-x quantum dots in GaAs nanowires by molecular-beam epitaxy. It is found that the size of the GaAs1-x Sb-x quantum dot can be well-defined by the GaAs nanowire. Energy dispersive spectroscopy analyses show that the antimony content x can be up to 0.36 by tuning the growth temperature. All GaAs1-x Sb(x )quantum dots exhibit a pure zinc-blende phase. In addition, we have developed a new technology to grow GaAs passivation layers on the sidewalls of the GaAs1-x Sb-x quantum dots. Different from the traditional growth process of the passivation layer, GaAs passivation layers can be grown simultaneously with the growth of the embedded GaAs1-x Sb-x quantum dots. The spontaneous GaAs passivation layer shows a pure zinc-blende phase due to the strict epitaxial relationship between the quantum dot and the passivation layer. The successful fabrication of embedded high-quality GaAs1-x Sb-x quantum dots lays the foundation for the realization of GaAs1-x Sb-x-based single photon sources.