Advanced HVPE sublimation sandwich method for Si layer formation on SiC substrates

被引：0

作者：

Park, Seonwoo ^{[1
]}

Kim, Kyoung Hwa ^{[2
]}

Mun, Suhyun ^{[1
]}

Jeon, Injun ^{[3
]}

Mun, Seon Jin ^{[1
]}

Cho, Young-Hun ^{[4
]}

Heo, Jeongbin ^{[1
]}

Yang, Min ^{[1
]}

Ahn, Hyung Soo ^{[1
]}

Jeon, Hunsoo ^{[2
]}

Lee, Jae Hak ^{[1
,5
]}

Jung, Kwanghee ^{[6
]}

Lee, Won Jae ^{[6
]}

Lee, Geon-Hee ^{[4
]}

Shin, Myeong-Cheol ^{[4
]}

Oh, Jong-Min ^{[4
]}

Shin, Weon Ho ^{[4
]}

Kim, Minkyung ^{[4
]}

Koo, Sang-Mo ^{[4
]}

Kang, Ye Hwan ^{[7
]}

机构：

[1] Natl Korea Maritime & Ocean Univ, Dept Nanosemicond Engn, Busan 49112, South Korea

[2] Busan Techno Park, Power Semicond Commercializat Ctr, Busan 46239, South Korea

[3] Daegu Gyeongbuk Inst Sci & Technol, Div Energy Technol, Daegu 42988, South Korea

[4] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South Korea

[5] LNBS Co Ltd, Busan 48731, South Korea

[6] Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea

[7] SK Powertech, Adv Dev Grp, Busan 46038, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2024年 / 85卷 / 10期

关键词：

Advanced hydride vapor-phase epitaxy; SiC substrate; Si layer; Sublimation sandwich method; THICK ALN LAYERS; SILICON-CARBIDE; EPITAXIAL-GROWTH; MECHANICAL-PROPERTIES; THERMAL-STABILITY; BULK CRYSTALS; KINETICS; PHASE; GAN; SUPERSATURATION;

D O I：

10.1007/s40042-024-01170-z

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An advanced hydride vapor-phase epitaxy (HVPE) method was used to improve the sublimation sandwich method for the formation of Si layers on SiC substrates. In this study, a graphite boat structure with a vertical source and growth zones was used, and the sublimation sandwich method was improved by directly attaching two substrates (without any spacing between them) differently from that of the existing sublimation sandwich method. After the deposition of the amorphous Si layer (using sputtering) on an SiC substrate, the recrystalline Si layer was formed at a temperature of 1250 degrees C using a SiCln source. Consequently, an Si layer with characteristics different from those of the sputtered Si layer was grown. The formed Si layer was characterized using field-emission scanning electron microscopy, energy-dispersive spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy. Overall, we propose an advanced HVPE sublimation sandwich method for forming Si layers on SiC substrates.

引用

页码：810 / 824

页数：15

共 50 条

[1] Epitaxial Formation of Graphene on Si Substrates: from Heteroepitaxy of 3C-SiC to Si Sublimation
Suemitsu, M.
Handa, H.
Saito, E.
Fukidome, H.
SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES, 2010, 33 (06): : 859 - 867
[2] Controlled growth of SiC and GaN by sublimation sandwich method
Mokhov, EN
Vodakov, YA
COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 177 - 182
[3] SiC growth in tantalum containers by sublimation sandwich method
Mokhov, EN
Ramm, MG
Roenkov, AD
Vodakov, YA
JOURNAL OF CRYSTAL GROWTH, 1997, 181 (03) : 254 - 258
[4] GaN growth via HVPE on SiC/Si substrates: growth mechanisms
Sharofidinov, Sh Sh
Redkov, A. V.
Osipov, A. V.
Kukushkin, S. A.
4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017), 2017, 917
[5] Peculiarities of Nucleation and Growth of InGaN Nanowires on SiC/Si Substrates by HVPE
Kukushkin, S. A.
Osipov, A. V.
Redkov, A. V.
Stozharov, V. M.
Ubiyvovk, E. V.
Sharofidinov, Sh. Sh.
TECHNICAL PHYSICS LETTERS, 2024, 50 (02) : 133 - 137
[6] The Mechanism of Growth of GaN Films by the HVPE Method on SiC Synthesized by the Substitution of Atoms on Porous Si Substrates
Kukushkin, S. A.
Sharofidinov, Sh. Sh.
Osipov, A. V.
Redkov, A. V.
Kidalov, V. V.
Grashchenko, A. S.
Soshnikov, I. P.
Dydenchuk, A. F.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2018, 7 (09) : P480 - P486
[7] Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates
Koryakin, Alexander A.
Kukushkin, Sergey A.
Osipov, Andrey, V
Sharofidinov, Shukrillo Sh
Shcheglov, Mikhail P.
MATERIALS, 2022, 15 (18)
[8] 4H-SiC growth by sublimation sandwich-method
Mokhov, EN
Roenkov, AD
Vodakov, YA
Saparin, GV
Obyden, SK
SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 245 - 248
[9] Formation of ZnO films on SiC/porous Si/Si substrates
Kidalov, V. V.
Dyadenchuk, A. F.
Baturin, V. A.
Karpenko, O. Yu.
Kolomys, O. F.
Ponomarenko, V. V.
Maksimenko, Z. V.
Strelchuk, V. V.
Bacherikov, Yu. Yu.
Okhrimenko, O. B.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2023, 26 (02) : 140 - 146
[10] Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates
Kukushkin, S. A.
Osipov, A. V.
Romanychev, A. I.
PHYSICS OF THE SOLID STATE, 2016, 58 (07) : 1448 - 1452

← 1 2 3 4 5 →