Fabrication of through sapphire vias by femtosecond laser bidirectional drilling

Three-dimensional (3D) heterogeneous integration has shown great promise in increasing integration density and reducing parasitic capacitance, which micro through vias on insulators are highly desired. In this work, femtosecond laser bidirectional drilling of crack-free micro through-sapphire-vias has been demonstrated. Mechanisms of material removal and defect suppression during the drilling process were studied. The bottom surface was drilled first and followed by the top surface drilling. A blind hole prefabricated by the bottom surface drilling can effectively suppress the edge collapse and extensive ablation damage on the bottom surface during subsequent top surface drilling with high pulse energy laser. Effects of incident laser parameters on the surface quality, morphology, diameter, and taper of the through hole at different drilling stages were systematically studied. Under given strategy, hole diameter down to similar to 50 mu m on 400 mu m-thick sapphire wafers can be achieved directly, showing great prospects in 3D heterogeneous integration.