Vis-IR black nano-silicon produced by wet femtosecond-laser nanotexturing/hyperdoping and nanosecond-laser annealing

被引:1
|
作者
Nastulyavichus, Alena A. [1 ]
Kudryashov, Sergey I. [1 ,2 ]
Ulturgasheva, Evgenia, V [2 ]
Kovalev, Michael S. [1 ,2 ]
Podlesnykh, Ivan M. [1 ,2 ]
Stsepuro, Nikita G. [1 ,2 ]
Shakhnov, Vadim A. [1 ]
机构
[1] Bauman Moscow State Tech Univ, Moscow 105005, Russia
[2] Lebedev Phys Inst, Moscow 119991, Russia
关键词
Nano-silicon; Femtosecond laser pulses; Hyperdoping; Nanosecond laser annealing; IR-Photonics; HYPERDOPED SILICON; INFRARED-ABSORPTION; SURFACE;
D O I
10.1016/j.optmat.2024.115817
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Compared to conventional oven-based annealing in ambient air of a silicon surface layer nanotextured and hyperdoped in CS2 fluid by femtosecond laser (black nano-silicon), low-intensity nanosecond laser annealing facilitated its delicate recrystallization, preserving quasi-regular nanoscale topography and high n-doping concentration by sulfur donor impurities. The retained and recrystallized topography of the laser-annealed nanosilicon with a few-percent doping level exhibits broadband optical absorption in the visible-near-infrared (vis-NIR) range, rendering this optical material promising for photovoltaic and IR-photonic applications.
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页数:5
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